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Gold Wire Bonding Induced Peeling in Cu/Low-k Interconnects: 3D Simulation and Correlations.
Tensile-strained germanium microdisks with circular Bragg reflectors
Dual-polarization O-band silicon nitride Bragg filters with high extinction ration
Contrôle technique CONTROLE TECHNIQUE DE CROLLES (CTC) - Dekra-Norisko.fr
Crolles 1 et Crolles 2
Crolles - Wikipedia
Study of MOSFET Low Frequency Noise Source Fluctuation Using a New Fully Programmable Test Set‐up
STMicroelectronics - La French Fab
Rue JEAN MONNET Crolles
Effects of plasma and wet processes on Si-rich anti- reflective coating to address selective trilayer rework for sub-20nm techno
Integration of ALD TaN barriers in porous low-k interconnect for the 45 nm node and beyond; solution to relax electron scatterin
PDF) Conception and optimization of new architecture for high performance organic field effect transistors
The Role of a Physical Analysis Laboratory in a 300 mm IC Development and Manufacturing Centre
Innovation Radar > Innovator > STMICROELECTRONICS CROLLES 2 SAS
Assessment and Characterization of Stress Induced by Via-First TSV Technology
STMICROELECTRONICS SA Crolles (Crolles, Auvergne-Rhône-Alpes)
Volkswagen Crolles - Jean Lain Mobilités Crolles Garage
Dealing With Multiple Grains in TEM Lamellae Thickness for Microstructure Analysis Using Scanning Precession Electron Diffraction | Microscopy and Microanalysis | Cambridge Core
Ultrahigh-responsivity waveguide-coupled optical power monitor for Si photonic circuits operating at near-infrared wavelengths | Nature Communications
PDF) High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement
Ultrahigh-sensitivity optical power monitor for Si photonic circuits
Sample manuscript showing specifications and style
Polar Gaussian Processes for Predicting on Circular Domains