Crolles 1 et Crolles 2
Gold Wire Bonding Induced Peeling in Cu/Low-k Interconnects: 3D Simulation and Correlations.
▷ ObjectifCode - Centre d'examen du code de la route Crolles
Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement | Scientific.Net
PDF) High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
Assessment and Characterization of Stress Induced by Via-First TSV Technology
Integration of ALD TaN barriers in porous low-k interconnect for the 45 nm node and beyond; solution to relax electron scatterin
Crolles 1 et Crolles 2
Evaluation for Intra-Word Faults in Word-Oriented RAMs
Polar Gaussian Processes for Predicting on Circular Domains
Numerical Analysis of the Reliability of Cu/low-k Bond Pad Interconnections Under Wire Pull Test: Application of a 3D Energy Bas
Contrôle technique CONTROLE TECHNIQUE DE CROLLES (CTC) - Dekra-Norisko.fr
Garage Di Marino - Garage automobile, 142 r Jean Monnet, 38920 Crolles (France) - Adresse, Horaire
STMicroelectronics - La French Fab
PDF) New techniques to characterize properties of advanced dielectric barriers for sub-65nm technology node | M. Veillerot - Academia.edu
STMICROELECTRONICS SA Crolles (Crolles, Auvergne-Rhône-Alpes)
Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development
STMICROELECTRONICS SA Crolles (Crolles, Auvergne-Rhône-Alpes)
Tensile-strained germanium microdisks with circular Bragg reflectors
Effects of plasma and wet processes on Si-rich anti- reflective coating to address selective trilayer rework for sub-20nm techno
